OXISTAR
High Temp Oxidation Furnace
Horizontal wafer batch processing
Dry & Wet Oxidation up to 1600°C
Oxygen free from 20°C
Automatic loading
Up to 50 wafers per batch
ACTISTAR
High Temp Activation Furnace
SiC, GaN wafers Annealing up to 2100 °C
Graphene growth
Fast Heating and Cooling Capability,
Up to 200mm wafer size