Atomic Layer Deposition System

Features

• Precise control of film thickness
• High film uniformity
• High temperature control precision
• Fully autonomous process chamber design, with the spatial and the temporal optional, multi-wafer and single-wafer optional

Technical Parameters

• Film Thickness : 1 – 20 nm
• Film Thickness Non-Uniformity : ≤5%
• Process Temperature : 80 – 120 °C
• Temperature Control Precision : ±1 °C (within wafer, wafer-to-wafer, batch-to-batch)
• Overall Temperature Uniformity : ±2.5 °C