Sputtering Deposition System
Features
- High process stability
- Stable NiOx metal reactive sputtering process
- Cylindrical ITO/NiOx target for high material utilization
- Adjustable target-to-substrate distance for low-damage TCO conductive film deposition
Technical Parameters
- ITO Film Coating Thickness Non-uniformity : ≤5% @ 100 nm
- ITO Film Sheet Resistance : ≤50 Ω/□ @ 100 nm
- ITO Film Average Visible Light Transmittance (400 – 900 nm) : ≥80% @ 100 nm (including ultra-clear glass substrate)
- ITO Film Average Visible Light Transmittance Non-uniformity : ≤5% @ 100 nm
- NiOx Film Coating Thickness Non-uniformity : ≤5% @ 100 nm
- NiOx Film Average Visible Light Transmittance Non-uniformity : ≤5% @ 20 nm
- Large-area Cell Sputtering Process Repeatability : ≥95%
- Cylindrical Target Utilization Rate : ≥80%
